Zero capacitor ram pdf

Active area and word line patterns are formed as perpendicularlyarranged straight lines on a silicononinsulator. Tantalum and polymer capacitors have mediumrange capacitance values, esr, and rated voltage. Zero capacitor ram is a type o f random access, semicondu ctor, volatile memory combin ed with the features o f both sram and dram. Request pdf retention characteristics of zerocapacitor ram zram cell based on finfet and trigate devices in this paper we experimentally study for the first time the retention. Static random access memory uses multiple transistors, typically four to six, for each memory cell but doesnt have a capacitor in each cell. Us9276000b2 manufacturing process for zerocapacitor. A basic overview of commonly encountered types of random. Request pdf retention characteristics of zero capacitor ram z ram cell based on finfet and trigate devices in this paper we experimentally study for the first time the retention. Retention characteristics of zerocapacitor ram zram.

Introduction to the ferroelectric memory rev e date. This charge, however, leaks off the capacitor due to the subthreshold current of the cell. If you have a microprocessor handy, it is easy to operate single bits of nonvolatile memory using a ferroelectric capacitor connected to the microprocessor inputoutput pins. Zero capacitor embedded memory technology for system on chip. Static ram is more expensive, requires four times the amount of space for a given amount of data than dynamic ram, but, unlike dynamic ram, does not need to be powerrefreshed. Zram uses a sin gle transisto r and no capacito r hence the name. By using a hybrid capacitor network, designers can take advantage of the benefits of each capacitor type. How to calculate the load pole and esr zero when using. Embodiments of a manufacturing process flow for producing standalone memory devices that can achieve bit cell sizes on the order of 4f2 or 5f2, and that can be applied to common sourcedrain, separate sourcedrain, or common source only or common drain only transistor arrays. Dram capacitor holds data, but needs to be refreshed as capacitance degrades approx.